SK Hynix HYMP125U64CP8-S6 2GB vs Samsung M4 70T5663QZ3-CE6 2GB

Overall score

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Overall score

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Differences Specifications Comments

Differences

SK Hynix HYMP125U64CP8-S6 2GB

Reasons to consider
SK Hynix HYMP125U64CP8-S6 2GB

Below the latency in the PassMark tests, ns

60 68

Around 12% lower latency
Faster reading speed, GB/s

5 3

Average value in the tests
Faster write speed, GB/s

2,381.6 1,702.6

Average value in the tests
Higher memory bandwidth, mbps

6400 5300

Around 1.21% higher bandwidth

Samsung M4 70T5663QZ3-CE6 2GB

Reasons to consider
Samsung M4 70T5663QZ3-CE6 2GB

Specifications

Complete list of technical specifications

SK Hynix HYMP125U64CP8-S6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Main characteristics

Memory type

DDR2 DDR2
Latency in PassMark, ns

60 68
Read speed, GB/s

5,082.2 3,886.6
Write speed, GB/s

2,381.6 1,702.6
Memory bandwidth, mbps

6400 5300

Other

Description

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)

925 654

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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