RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Faster reading speed, GB/s
16
14.7
Average value in the tests
Faster write speed, GB/s
12.5
8.6
Average value in the tests
Higher memory bandwidth, mbps
19200
17000
Around 1.13% higher bandwidth
Reasons to consider
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
24
24
Read speed, GB/s
16.0
14.7
Write speed, GB/s
12.5
8.6
Memory bandwidth, mbps
19200
17000
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2925
2434
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378A1G43DB0-CPB 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Corsair CMK32GX4M2D3600C18 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Samsung M393B1K70CH0-YH9 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Samsung M393B2G70BH0-YK0 16GB
EVGA 16G-D4-2800-MR 4GB
SK Hynix HMT325S6CFR8C-H9 2GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4D240FSB.16FAR 8GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMD32GX4M2A2666C15 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Samsung M3 93T5750CZA-CE6 2GB
Mushkin 99[2/7/4]200F 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C15-8GRBB 8GB
Kingston 99U5471-012.A00LF 4GB
Samsung M393A1G43DB1-CRC 8GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-2400C17-16GIS 16GB
Report a bug
×
Bug description
Source link