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Kingston 9905403-156.A00LF 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB

Kingston 9905403-156.A00LF 2GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

Overall score
star star star star star
Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Differences Specifications Comments

Differences

Kingston 9905403-156.A00LF 2GB Reasons to consider
Kingston 9905403-156.A00LF 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    18 left arrow 35
    Around 49% lower latency
  • Faster reading speed, GB/s
    17.7 left arrow 14.8
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 11.2
    Average value in the tests
Micron Technology 4ATF51264HZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Kingston 9905403-156.A00LF 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    18 left arrow 35
  • Read speed, GB/s
    17.7 left arrow 14.8
  • Write speed, GB/s
    13.1 left arrow 11.2
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2926 left arrow 2336

Kingston 9905403-156.A00LF 2GB RAM comparisons

Super Talent L89 11/2011 LOGIN. 4GB
Samsung M393B1K70EB0-CH9 8GB

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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