RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston KVR533D2N4 512MB
Crucial Technology BL8G24C16U4B.8FD 8GB
Compare
Kingston KVR533D2N4 512MB vs Crucial Technology BL8G24C16U4B.8FD 8GB
Overall score
Kingston KVR533D2N4 512MB
Overall score
Crucial Technology BL8G24C16U4B.8FD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Kingston KVR533D2N4 512MB
Report a bug
Reasons to consider
Crucial Technology BL8G24C16U4B.8FD 8GB
Report a bug
Below the latency in the PassMark tests, ns
40
75
Around -88% lower latency
Faster reading speed, GB/s
9.3
1
Average value in the tests
Faster write speed, GB/s
6.4
1,672.1
Average value in the tests
Higher memory bandwidth, mbps
19200
4200
Around 4.57 higher bandwidth
Specifications
Complete list of technical specifications
Kingston KVR533D2N4 512MB
Crucial Technology BL8G24C16U4B.8FD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
75
40
Read speed, GB/s
1,943.5
9.3
Write speed, GB/s
1,672.1
6.4
Memory bandwidth, mbps
4200
19200
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
4-4-4-12 / 533 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
301
2117
Kingston KVR533D2N4 512MB RAM comparisons
Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB
Crucial Technology BL8G24C16U4B.8FD 8GB RAM comparisons
Samsung M395T2863QZ4-CF76 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston KVR533D2N4 512MB
Crucial Technology BL8G24C16U4B.8FD 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Transcend Information AQD-D4U4GN21-SG 4GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-3200C14-16GFX 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Micron Technology ILG8GS2400A 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4DFD824A.C16FDD 16GB
Corsair VS1GB800D2 1GB
Corsair CMSX64GX4M4A2666C18 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-3200C15-8GTZKW 8GB
Kingston 9905403-444.A00LF 4GB
Samsung M471A5244CB0-CTD 4GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Kingmax Semiconductor GLMH23F-18MCIA------ 16GB
AMD R538G1601U2S 8GB
Corsair CMK128GX4M4A2666C16 32GB
Kingston ACR512X64D3S13C9G 4GB
EXCELERAM D48G8G8H8SS9CJRB22 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-4266C19-8GTRS 8GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
Report a bug
×
Bug description
Source link