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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Micron Technology 4ATS1G64HZ-2G3B1 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Overall score
star star star star star
Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Micron Technology 4ATS1G64HZ-2G3B1 8GB Reasons to consider
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Report a bug
  • Faster reading speed, GB/s
    17.1 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    13.1 left arrow 7.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 8500
    Around 2.26 higher bandwidth

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Micron Technology 4ATS1G64HZ-2G3B1 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 28
  • Read speed, GB/s
    10.9 left arrow 17.1
  • Write speed, GB/s
    7.1 left arrow 13.1
  • Memory bandwidth, mbps
    8500 left arrow 19200
Other
  • Description
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1066 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    1668 left arrow 2833

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons

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Micron Technology 4ATS1G64HZ-2G3B1 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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