Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Micron Technology 4ATS1G64HZ-2G3B1 8GB

総合得点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

総合得点

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

相違点仕様コメント

相違点

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

考慮すべき理由
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

バグを報告する

Micron Technology 4ATS1G64HZ-2G3B1 8GB

考慮すべき理由
Micron Technology 4ATS1G64HZ-2G3B1 8GB

バグを報告する

読み出し速度の高速化、GB/s

17.1 10.9

テスト平均値
書き込み速度の高速化、GB/s

13.1 7.1

テスト平均値
より高いメモリ帯域幅、mbps

19200 8500

周辺 2.26 高帯域

仕様

技術仕様の完全リスト

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

主な特徴

メモリータイプ

DDR3 DDR4
PassMarkにおけるレイテンシー、ns

28 28
読み出し速度、GB/s

10.9 17.1
書き込み速度、GB/秒

7.1 13.1
メモリ帯域幅、mbps

8500 19200

Other

商品説明

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
タイミング / クロック速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
ランキングPassMark（多ければ多いほど良い）

1668 2833

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新の比較

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C

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Kingston 99U5471-002.A00LF 2GB

Samsung M378T5663DZ3-CF7 2GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Samsung M471A1K43BB1-CTD 8GB

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Kingston 9905471-001.A01LF 2GB

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Transcend Information JM2666HSB-16G 16GB

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Kingston 99U5584-017.A00LF 4GB

Golden Empire CL16-20-20 D4-3200 16GB

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