RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs Chun Well Technology Holding Limited D4U0832161B 8GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
Chun Well Technology Holding Limited D4U0832161B 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Below the latency in the PassMark tests, ns
33
34
Around 3% lower latency
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Chun Well Technology Holding Limited D4U0832161B 8GB
Report a bug
Faster reading speed, GB/s
19.1
17.8
Average value in the tests
Faster write speed, GB/s
12.6
12.5
Average value in the tests
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
Chun Well Technology Holding Limited D4U0832161B 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
34
Read speed, GB/s
17.8
19.1
Write speed, GB/s
12.5
12.6
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3285
3178
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited D4U0832161B 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology BLT8G4D26BFT4K.C8FD 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Apacer Technology AQD-SD4U4GN24-SG 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS8G4S240FSDK.8FBD 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Kingston 9905702-010.A00G 8GB
Kingston X2YH1K-MIE 16GB
AMD R5S38G1601U2S 8GB
Corsair CMK32GX4M4A2666C16 8GB
Elpida EBJ41UF8BDW0-GN-F 4GB
Crucial Technology CT51264BA160B.M16F 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Corsair CMD16GX4M2A2400C14 8GB
Kingston 9965662-016.A00G 16GB
Micron Technology 8ATF2G64HZ-3G2E1 16GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix GKE160SO102408-2400 16GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMK8GX4M2B4200C19 4GB
Kingston KVR533D2N4 512MB
Golden Empire CL16-16-16 D4-3000 4GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Report a bug
×
Bug description
Source link