RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
Compare
Lexar Co Limited LD4AU016G-H3200GST 16GB vs G Skill Intl F4-2800C17-8GIS 8GB
Overall score
Lexar Co Limited LD4AU016G-H3200GST 16GB
Overall score
G Skill Intl F4-2800C17-8GIS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Lexar Co Limited LD4AU016G-H3200GST 16GB
Report a bug
Faster reading speed, GB/s
17.8
15.3
Average value in the tests
Faster write speed, GB/s
12.5
10.2
Average value in the tests
Higher memory bandwidth, mbps
25600
17000
Around 1.51% higher bandwidth
Reasons to consider
G Skill Intl F4-2800C17-8GIS 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
33
Around -3% lower latency
Specifications
Complete list of technical specifications
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
33
32
Read speed, GB/s
17.8
15.3
Write speed, GB/s
12.5
10.2
Memory bandwidth, mbps
25600
17000
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
3285
2706
Lexar Co Limited LD4AU016G-H3200GST 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2800C17-8GIS 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2800C17-8GIS 8GB
A-DATA Technology VDQVE1B16 2GB
Samsung M378A5244CB0-CWE 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Apacer Technology GD2.1827CS.003 8GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology 16GB 2133MHz DIMM 16GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Samsung M386A2G40DB0-CPB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS8G4D26BFSBK.8FD 8GB
Corsair CML8GX3M2A1600C9 4GB
Patriot Memory (PDP Systems) PSD44G213341 4GB
Kingston 9965525-144.A00LF 8GB
Kingston KH2400C15D4/8 8GB
SK Hynix HYMP512U64CP8-Y5 1GB
Corsair CMH32GX4M2Z3600C18 16GB
Peak Electronics 256X64M-67E 2GB
Crucial Technology CT16G4DFD8266.C16FJ 16GB
Samsung M393A1G40DB0-CPB 8GB
Corsair CMK16GX4M2B3466C16 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology BL16G32C16U4W.16FE 16GB
Report a bug
×
Bug description
Source link