RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Compare
Micron Technology 16JSF25664HZ-1G1F1 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Overall score
Micron Technology 16JSF25664HZ-1G1F1 2GB
Overall score
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JSF25664HZ-1G1F1 2GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around -4% lower latency
Faster reading speed, GB/s
18.1
10.5
Average value in the tests
Faster write speed, GB/s
14.8
7.1
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
28
Read speed, GB/s
10.5
18.1
Write speed, GB/s
7.1
14.8
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 5 6 7 8
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1425
3564
Micron Technology 16JSF25664HZ-1G1F1 2GB RAM comparisons
Netlist N*D1G7A2250BFD53I2 8GB
Crucial Technology BLS8G4D26BFSBK.8FBD 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM comparisons
G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PNY Electronics PNY 2GB
Chun Well Technology Holding Limited D4U0830160B 8GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
Samsung M393B2G70BH0-CH9 16GB
Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2933C16-8GFX 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 16ATF2G64AZ-2G3H1 16GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Crucial Technology CT16G4SFRA32A.C16FP 16GB
Samsung M395T2863QZ4-CF76 1GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston 9905295-015.B00LF 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905744-067.A00G 32GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2933C14-8GFX 8GB
Kingston 99U5428-018.A00LF 8GB
Crucial Technology CT16G4SFD8266 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Wilk Elektronik S.A. IRX3200D464L16S/8G 8GB
Report a bug
×
Bug description
Source link