Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung V-GeN D4S4GL32A8TL 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB vs Samsung V-GeN D4S4GL32A8TL 4GB

Overall score
star star star star star
Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Overall score
star star star star star
Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

Differences

  • Below the latency in the PassMark tests, ns
    40 left arrow 58
    Around 31% lower latency
  • Faster reading speed, GB/s
    18.5 left arrow 13.6
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 8.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF25664AZ-1G4F1 2GB
Samsung V-GeN D4S4GL32A8TL 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    40 left arrow 58
  • Read speed, GB/s
    13.6 left arrow 18.5
  • Write speed, GB/s
    8.3 left arrow 9.5
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2035 left arrow 1998
RAM Latency Calculator
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