RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Compare
Micron Technology 16JTF51264HZ-1G6M1 4GB vs Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Overall score
Micron Technology 16JTF51264HZ-1G6M1 4GB
Overall score
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
32
Around 13% lower latency
Reasons to consider
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Report a bug
Faster reading speed, GB/s
16.3
12.9
Average value in the tests
Faster write speed, GB/s
11.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
32
Read speed, GB/s
12.9
16.3
Write speed, GB/s
9.0
11.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2112
2849
Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 99U5663-007.A00G 16GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avexir Technologies Corporation DDR4-2666 CL15 4GB 4GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9905598-009.A00G 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CM4X16GC3000C16K8 16GB
Kingston 9905471-006.A00LF 4GB
Micron Technology 18ASF2G72PDZ-2G6H1R 16GB
Team Group Inc. UD5-6400 16GB
Samsung M378A5244CB0-CVF 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMK64GX4M4A2400C14 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
Team Group Inc. UD5-6400 16GB
Gloway International (HK) STK4U2400D17082C 8GB
Kingston 99U5584-017.A00LF 4GB
Corsair CMK16GX4M2A2666C18 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
PNY Electronics PNY 2GB
Kingston 99U5713-003.A00G 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Samsung M378A2K43BB1-CRC 16GB
Report a bug
×
Bug description
Source link