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Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A5244CB0-CWE 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB vs Samsung M471A5244CB0-CWE 4GB

Overall score
star star star star star
Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Overall score
star star star star star
Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Differences Specifications Comments

Differences

Micron Technology 16JTF51264HZ-1G6M1 4GB Reasons to consider
Micron Technology 16JTF51264HZ-1G6M1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 38
    Around 26% lower latency
Samsung M471A5244CB0-CWE 4GB Reasons to consider
Samsung M471A5244CB0-CWE 4GB
Report a bug
  • Faster reading speed, GB/s
    15.5 left arrow 12.9
    Average value in the tests
  • Faster write speed, GB/s
    12.0 left arrow 9.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16JTF51264HZ-1G6M1 4GB
Samsung M471A5244CB0-CWE 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    28 left arrow 38
  • Read speed, GB/s
    12.9 left arrow 15.5
  • Write speed, GB/s
    9.0 left arrow 12.0
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2112 left arrow 2283

Micron Technology 16JTF51264HZ-1G6M1 4GB RAM comparisons

SK Hynix HMT351S6CFR8C-PB 4GB
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Samsung M471A5244CB0-CWE 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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