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Micron Technology 4KTF25664HZ-1G6E1 2GB
A-DATA Technology 11137401 8GB

Micron Technology 4KTF25664HZ-1G6E1 2GB vs A-DATA Technology 11137401 8GB

Overall score
star star star star star
Micron Technology 4KTF25664HZ-1G6E1 2GB

Micron Technology 4KTF25664HZ-1G6E1 2GB

Overall score
star star star star star
A-DATA Technology 11137401 8GB

A-DATA Technology 11137401 8GB

Differences Specifications Comments

Differences

Micron Technology 4KTF25664HZ-1G6E1 2GB Reasons to consider
Micron Technology 4KTF25664HZ-1G6E1 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 40
    Around 33% lower latency
  • Faster write speed, GB/s
    8.7 left arrow 7.3
    Average value in the tests
A-DATA Technology 11137401 8GB Reasons to consider
A-DATA Technology 11137401 8GB
Report a bug
  • Faster reading speed, GB/s
    15.1 left arrow 14.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 4KTF25664HZ-1G6E1 2GB
A-DATA Technology 11137401 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 40
  • Read speed, GB/s
    14.1 left arrow 15.1
  • Write speed, GB/s
    8.7 left arrow 7.3
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2207 left arrow 1921

Micron Technology 4KTF25664HZ-1G6E1 2GB RAM comparisons

Samsung M471B5674QH0-YK0 2GB

A-DATA Technology 11137401 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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