RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Kingmax Semiconductor GLLF62F-C6---------- 4GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Report a bug
Below the latency in the PassMark tests, ns
23
51
Around -122% lower latency
Faster reading speed, GB/s
17
15.6
Average value in the tests
Faster write speed, GB/s
13.2
11.8
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
23
Read speed, GB/s
15.6
17.0
Write speed, GB/s
11.8
13.2
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2935
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
Panram International Corporation PUD42400C154GNJW 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BL8G26C16U4R.8FD 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Kingston 9905678-041.A00G 4GB
Kingston ACR256X64D3S1333C9 2GB
Team Group Inc. TEAMGROUP-UD4-4133 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMD16GX4M4B3200C15 4GB
Samsung M378B5773CH0-CH9 2GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
Samsung M393A1G40DB0-CPB 8GB
G Skill Intl F4-2800C17-8GIS 8GB
Qimonda 64T128020EDL2.5C2 1GB
Corsair CMW16GX4M2C3466C16 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-3000C16-8GSXWB 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Samsung M471B5173DB0-YK0 4GB
Avant Technology W641GU42J7240NB 8GB
Kingston ACR256X64D3S1333C9 2GB
Kingston ASU1333D3S9DR8/2G 2GB
Report a bug
×
Bug description
Source link