RAM comparison Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Overall score

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Overall score

Differences Specifications Comments

Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Below the latency in the PassMark tests, ns

51 62

Around 18% lower latency
Faster write speed, GB/s

11.8 7.0

Average value in the tests
Higher memory bandwidth, mbps

25600 19200

Around 1.33% higher bandwidth

Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB

Complete list of technical specifications

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Main characteristics

Other

Description

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2687 1808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns