RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
Micron Technology 8ATF2G64HZ-3G2E2 16GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Report a bug
Below the latency in the PassMark tests, ns
51
56
Around 9% lower latency
Faster write speed, GB/s
11.8
10.5
Average value in the tests
Higher memory bandwidth, mbps
25600
19200
Around 1.33% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Faster reading speed, GB/s
20.1
15.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
51
56
Read speed, GB/s
15.6
20.1
Write speed, GB/s
11.8
10.5
Memory bandwidth, mbps
25600
19200
Other
Description
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2687
2455
Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Corsair CMZ16GX3M2A2400C10 8GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Kingston 9905471-001.A01LF 2GB
G Skill Intl F4-3000C16-8GTRS 8GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Kingston ACR512X64D3S13C9G 4GB
Wilk Elektronik S.A. IRH3200D464L16S/8G 8GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-2133C15-4GRS 4GB
Kingston K1N7HK-ELC 2GB
Corsair CMK128GX4M8B3000C16 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Mushkin 99[2/7/4]205F 8GB
PUSKILL DDR3 1600 8G 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Kingston 9965516-112.A00LF 16GB
AMD R748G2400U2S 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-4400C18-8GTZR 8GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Samsung M471A4G43BB1-CWE 32GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.CAGN7.4000C 8GB
Report a bug
×
Bug description
Source link