RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Compare
Nanya Technology M2F4GH64CB8HB6N-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Overall score
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
30
Around 13% lower latency
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Report a bug
Faster reading speed, GB/s
14.5
12.3
Average value in the tests
Faster write speed, GB/s
9.0
7.1
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
30
Read speed, GB/s
12.3
14.5
Write speed, GB/s
7.1
9.0
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1952
2374
Nanya Technology M2F4GH64CB8HB6N-CG 4GB RAM comparisons
SK Hynix HMT125U6DFR8C-H9 2GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM comparisons
Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology AFLD416EH1P 16GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-3200C16-16GFX 16GB
Kingston HP698651-154-MCN 8GB
Crucial Technology CT4G4SFS8213.C8FHP 4GB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-2800C18-8GRS 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung 1600 CL10 Series 8GB
Essencore Limited IM4AGU88N24-FFFHA0 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston K000MD44U 4GB
Kingston 9905403-444.A00LF 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology BL8G32C16U4WL.M8FE 8GB
Hexon Technology Pte Ltd HEXON 1GB
V-Color Technology Inc. TL8G36818D-E6PRWWK 8GB
Samsung M393B1K70QB0-CK0 8GB
Hewlett-Packard 7TE39AA#ABC 8GB
A-DATA Technology AD73I1C1674EV 4GB
Transcend Information TS1GLH64V1H 8GB
Report a bug
×
Bug description
Source link