RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Samsung M393A2G40EB1-CRC 16GB
Compare
Nanya Technology M2F8G64CB8HB5N-DI 8GB vs Samsung M393A2G40EB1-CRC 16GB
Overall score
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Overall score
Samsung M393A2G40EB1-CRC 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Report a bug
Below the latency in the PassMark tests, ns
40
55
Around 27% lower latency
Faster reading speed, GB/s
14.7
9.3
Average value in the tests
Faster write speed, GB/s
9.5
7.4
Average value in the tests
Reasons to consider
Samsung M393A2G40EB1-CRC 16GB
Report a bug
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Samsung M393A2G40EB1-CRC 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
40
55
Read speed, GB/s
14.7
9.3
Write speed, GB/s
9.5
7.4
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2486
2078
Nanya Technology M2F8G64CB8HB5N-DI 8GB RAM comparisons
Corsair CMW32GX4M2Z3600C18 16GB
A-DATA Technology AO1P26KCST2-BZISHC 16GB
Samsung M393A2G40EB1-CRC 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 93T5750CZA-CE6 2GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BL4G24C16U4B.8FB 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Nanya Technology M2F8G64CB8HB5N-DI 8GB
Samsung M393A2G40EB1-CRC 16GB
Kingston KTC1G-UDIMM 1GB
Essencore Limited KD4AGU880-36A180U 16GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMK32GX4M2E3200C16 16GB
AMD AE34G1601U1 4GB
Kingston K000MD44U 4GB
TwinMOS 9DNPBNZB-TATP 4GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Apacer Technology 78.01G86.9H50C 1GB
Corsair CMK16GX4M2K4000C19 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMT64GX4M8C3200C16 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Report a bug
×
Bug description
Source link