RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs G Skill Intl F4-3300C16-16GTZKW 16GB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
G Skill Intl F4-3300C16-16GTZKW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Faster reading speed, GB/s
2
16.1
Average value in the tests
Reasons to consider
G Skill Intl F4-3300C16-16GTZKW 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
92
Around -283% lower latency
Faster write speed, GB/s
11.9
1,266.1
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
92
24
Read speed, GB/s
2,105.4
16.1
Write speed, GB/s
1,266.1
11.9
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
339
3305
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB
G Skill Intl F4-3300C16-16GTZKW 16GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M474A1G43EB1-CRC 8GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK8GX4M2B3866C18 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Patriot Memory (PDP Systems) 2666 C15 Series 4GB
Corsair CMSO4GX3M1C1600C11 4GB
Corsair CM4X8GF2400C14K4 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GTZRX 8GB
Asgard VMA45UG-MEC1U2AW1 8GB
Corsair CMR128GX4M8Z2933C16 16GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
A-DATA Technology DOVF1B163G2G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-2133C15-8GVR 8GB
AMD R5316G1609U2K 8GB
Kingston 99U5712-002.A00G 16GB
Samsung M393B5170FH0-CK0 4GB
G Skill Intl F4-4400C16-8GTZR 8GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3600C19-16GTRS 16GB
Samsung M395T2863QZ4-CF76 1GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Kingston KVR800D2N6/2G 2GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Report a bug
×
Bug description
Source link