RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Compare
Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Overall score
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Report a bug
Higher memory bandwidth, mbps
6400
5300
Around 1.21% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Report a bug
Below the latency in the PassMark tests, ns
67
92
Around -37% lower latency
Faster reading speed, GB/s
2
2
Average value in the tests
Faster write speed, GB/s
1,273.3
1,266.1
Average value in the tests
Specifications
Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Main characteristics
Memory type
DDR2
DDR2
Latency in PassMark, ns
92
67
Read speed, GB/s
2,105.4
2,857.8
Write speed, GB/s
1,266.1
1,273.3
Memory bandwidth, mbps
6400
5300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
5-5-5-15 / 800 MHz
5-5-5-15 / 667 MHz
Ranking PassMark (The more the better)
339
344
Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM comparisons
Kingston 9905744-067.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB RAM comparisons
Mushkin MR[ABC]4U320GJJM16G 16GB
Samsung M393A1G43DB1-CRC 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Corsair CMK32GX5M2B5600C36 16GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Ramaxel Technology RMN1740HC48D8F667A 2GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Kingston 99U5458-008.A00LF 4GB
Thermaltake Technology Co Ltd R019D408GX2-3600C18A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2400C17-8GSXW 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT4G4DFS824A.M8FF 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9965662-015.A00G 16GB
Crucial Technology CT51264BD160B.C16F 4GB
Essencore Limited IM44GU48N21-FFFHM 4GB
Patriot Memory (PDP Systems) PSD34G1600L81S 4GB
A-DATA Technology AM2L16BC4R1-B0PS 4GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BL32G32C16S4B.16FB 32GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4SFS824A.C8FDD1 8GB
Report a bug
×
Bug description
Source link