Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Overall score
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Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB

Differences

  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21% higher bandwidth
  • Below the latency in the PassMark tests, ns
    67 left arrow 92
    Around -37% lower latency
  • Faster reading speed, GB/s
    2 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    1,273.3 left arrow 1,266.1
    Average value in the tests

Specifications

Complete list of technical specifications
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    92 left arrow 67
  • Read speed, GB/s
    2,105.4 left arrow 2,857.8
  • Write speed, GB/s
    1,266.1 left arrow 1,273.3
  • Memory bandwidth, mbps
    6400 left arrow 5300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    339 left arrow 344
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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