RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
17.3
Average value in the tests
Reasons to consider
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
34
54
Around -59% lower latency
Faster write speed, GB/s
14.5
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
17000
5300
Around 3.21 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
34
Read speed, GB/s
3,573.5
17.3
Write speed, GB/s
1,308.1
14.5
Memory bandwidth, mbps
5300
17000
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
371
3606
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK16GX4M2A2800C16 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Transcend Information TS2GLH64V4B 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Chun Well Technology Holding Limited CL18-22-22 D4-3600
Elpida EBJ40UG8EFU0-GN-F 4GB
SK Hynix HMA82GU6AFR8N-UH 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BL8G30C15U4B.M8FE 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB
Kingston 9905403-090.A01LF 4GB
Kingston 9965662-008.A01G 16GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMK16GX4M4B3333C16 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905599-010.A00G 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Corsair CMK32GX4M4A2400C12 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingmax Semiconductor KLDE88F-B8KW6 2GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology AFLD48VH1P 8GB
Report a bug
×
Bug description
Source link