RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
Nanya Technology M2Y51264TU88B0B-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
Nanya Technology M2Y51264TU88B0B-3C 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology M2Y51264TU88B0B-3C 512MB
Report a bug
Faster reading speed, GB/s
3
16.2
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
54
Around -93% lower latency
Faster write speed, GB/s
12.7
1,308.1
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
54
28
Read speed, GB/s
3,573.5
16.2
Write speed, GB/s
1,308.1
12.7
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
371
2417
Nanya Technology M2Y51264TU88B0B-3C 512MB RAM comparisons
Nanya Technology M2Y51264TU88B0B-37 512MB
Kingston KF3200C20S4/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS6266.M4FE 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston 99U5474-010.A00LF 2GB
G Skill Intl F4-2400C15-16GIS 16GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-3333C16-8GTZSK 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Crucial Technology CT4G4SFS8213.C8FADP 4GB
Kingston KVR533D2N4 512MB
Kingston XW21KG-HYD-NX 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9965640-004.C00G 16GB
AMD R5316G1609U2K 8GB
Kingston KF3200C16D4/16GX 16GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Corsair CMSX16GX4M2A2666C18 8GB
Kingston 99U5474-013.A00LF 2GB
G Skill Intl F4-3000C15-8GTZ 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Transcend Information AQD-SD4U4GN21-SG 4GB
SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited CL17-17-17 D4-2400
AMD R5316G1609U2K 8GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Report a bug
×
Bug description
Source link