RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Faster reading speed, GB/s
9.7
9.5
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Report a bug
Below the latency in the PassMark tests, ns
37
42
Around -14% lower latency
Faster write speed, GB/s
7.7
6.0
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
37
Read speed, GB/s
9.7
9.5
Write speed, GB/s
6.0
7.7
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
1396
1949
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB RAM comparisons
Samsung M471B5173QH0-YK0 4GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Teikon TMA451S6AFR8N-TFSC 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Samsung V-GeN D4S8GL24A8 8GB
Samsung M471B5773DH0-CH9 2GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-2666C18-4GRS 4GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Corsair CMK16GX4M2C3000C15 8GB
Crucial Technology CT102464BF160B-16F 8GB
G Skill Intl F4-3600C18-16GTRS 16GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Crucial Technology CT51264BA1339.C16F 4GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Samsung M471B1G73EB0-YK0 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK64GX4M4B2800C14 16GB
Kingston 99U5474-037.A00LF 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology DDR4 3000 8GB
Kingston 9905403-156.A00LF 2GB
Patriot Memory (PDP Systems) PSD48G21332S 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLE4G4D26AFEA.8FBD 4GB
Report a bug
×
Bug description
Source link