RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Compare
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Report a bug
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
Below the latency in the PassMark tests, ns
38
42
Around -11% lower latency
Faster reading speed, GB/s
14.2
9.7
Average value in the tests
Faster write speed, GB/s
10.3
6.0
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
42
38
Read speed, GB/s
9.7
14.2
Write speed, GB/s
6.0
10.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1396
2148
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Golden Empire CL14-16-16 D4-3000 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-2666C18-32GVK 32GB
Kingston 99U5429-007.A00LF 2GB
Thermaltake Technology Co Ltd R017D408GX2-3600C18A 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLE8G4D26AFEA.16FBD 8GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston X74R9W-MIE 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMD64GX4M4C3000C15 16GB
Samsung M378B5773DH0-CH9 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
Samsung M393B5270CH0-CH9 4GB
Kingston 9905702-204.A00G 8GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMW64GX4M8C3466C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK128GX4M4A2400C16 32GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd GKE160SO102408-2933 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9965640-008.A01G 32GB
A-DATA Technology DDR3 1333G 2GB
Samsung M393A4K40CB1-CRC 32GB
Report a bug
×
Bug description
Source link