Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273CH0-YK0 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M471B5273CH0-YK0 4GB

Overall score
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Overall score
star star star star star
Samsung M471B5273CH0-YK0 4GB

Samsung M471B5273CH0-YK0 4GB

Differences

  • Below the latency in the PassMark tests, ns
    38 left arrow 42
    Around -11% lower latency
  • Faster reading speed, GB/s
    12.6 left arrow 9.7
    Average value in the tests
  • Faster write speed, GB/s
    8.8 left arrow 6.0
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273CH0-YK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 38
  • Read speed, GB/s
    9.7 left arrow 12.6
  • Write speed, GB/s
    6.0 left arrow 8.8
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1396 left arrow 2174
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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