RAM comparison Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Overall score

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Faster reading speed, GB/s

13 8.8

Average value in the tests
Faster write speed, GB/s

9.0 5.6

Average value in the tests
Higher memory bandwidth, mbps

12800 10600

Around 1.21% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Complete list of technical specifications

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Main characteristics

Other

Description

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)

2079 1344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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