RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
11.3
Average value in the tests
Reasons to consider
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
71
Around -122% lower latency
Faster write speed, GB/s
9.6
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
19200
5300
Around 3.62 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
32
Read speed, GB/s
2,831.6
11.3
Write speed, GB/s
1,322.6
9.6
Memory bandwidth, mbps
5300
19200
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
399
2395
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Micron Technology 18ASF1G72PDZ-2G3B1 8GB RAM comparisons
Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 16JSF25664HZ-1G1F1 2GB
Corsair CMK8GX4M2A2133C13 4GB
Samsung M378B1G73QH0-CK0 8GB
Corsair CMD32GX4M4C3200C14T 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
G Skill Intl F4-2800C15-8GRBB 8GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
G Skill Intl F4-2666C18-4GRS 4GB
Samsung M471B5173DB0-YK0 4GB
Samsung M378A2G43MB1-CTD 16GB
G Skill Intl F3-2400C11-8GSR 8GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Patriot Memory (PDP Systems) PSD48G266682 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston KHX2133C13S4/8G 8GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-2800C15-16GVR 16GB
A-DATA Technology AD73I1C1674EV 4GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston XCCT36-MIE 16GB
Samsung M378A5244CB0-CTD 4GB
Corsair CMK16GX4M2Z2933C16 8GB
Kingston 99U5428-040.A00LF 4GB
Kingston 9965640-004.C00G 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Wilk Elektronik S.A. GR2133D464L15S/8G 8GB
Report a bug
×
Bug description
Source link