Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Overall score
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB

Differences

  • Below the latency in the PassMark tests, ns
    66 left arrow 71
    Around -8% lower latency
  • Faster reading speed, GB/s
    4 left arrow 2
    Average value in the tests
  • Faster write speed, GB/s
    2,935.8 left arrow 1,322.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    71 left arrow 66
  • Read speed, GB/s
    2,831.6 left arrow 4,360.5
  • Write speed, GB/s
    1,322.6 left arrow 2,935.8
  • Memory bandwidth, mbps
    5300 left arrow 6400
Other
  • Description
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 667 MHz left arrow 5-5-5-15 / 800 MHz
  • Ranking PassMark (The more the better)
    399 left arrow 728
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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