RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA851U6DJR6N-XN 4GB
Compare
Nanya Technology NT512T64U88B0BY-3C 512MB vs SK Hynix HMA851U6DJR6N-XN 4GB
Overall score
Nanya Technology NT512T64U88B0BY-3C 512MB
Overall score
SK Hynix HMA851U6DJR6N-XN 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Nanya Technology NT512T64U88B0BY-3C 512MB
Report a bug
Faster reading speed, GB/s
2
15.9
Average value in the tests
Reasons to consider
SK Hynix HMA851U6DJR6N-XN 4GB
Report a bug
Below the latency in the PassMark tests, ns
32
71
Around -122% lower latency
Faster write speed, GB/s
10.6
1,322.6
Average value in the tests
Higher memory bandwidth, mbps
25600
5300
Around 4.83 higher bandwidth
Specifications
Complete list of technical specifications
Nanya Technology NT512T64U88B0BY-3C 512MB
SK Hynix HMA851U6DJR6N-XN 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
71
32
Read speed, GB/s
2,831.6
15.9
Write speed, GB/s
1,322.6
10.6
Memory bandwidth, mbps
5300
25600
Other
Description
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
5-5-5-15 / 667 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
399
2240
Nanya Technology NT512T64U88B0BY-3C 512MB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
SK Hynix HMA851U6DJR6N-XN 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B5273EB0-CK0 4GB
Crucial Technology BL8G32C16S4B.M8FE1 8GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BLS8G4D32AESTK.M8FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A2K43DB1-CTD 16GB
Qimonda 64T128020EDL2.5C2 1GB
G Skill Intl F4-2666C15-4GRR 4GB
Kingston 99P5474-014.A00LF 4GB
Corsair CMK8GX4M2A2666C16 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMU32GX4M4C3000C16 8GB
Samsung M393B2G70BH0-CK0 16GB
Nanya Technology NT8GA64D88AX3S-HR 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston K6VDX7-HYD 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-2933C16-16GFX 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMD16GX4M2C3333C16 8GB
Kingston KHX1600C9S3L/4G 4GB
Kingston 9905701-131.A00G 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CM4X4GF2400Z16K4 4GB
Samsung M393B5170FH0-CK0 4GB
Golden Empire CL16-18-18 D4-3400 4GB
Kingston K531R8-MIN 4GB
Corsair CMT32GX4M4C3466C16 8GB
Report a bug
×
Bug description
Source link