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Nanya Technology NT8GC64B8HB0NS-DI 8GB
Samsung M471A5143SB1-CRC 4GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB vs Samsung M471A5143SB1-CRC 4GB

Overall score
star star star star star
Nanya Technology NT8GC64B8HB0NS-DI 8GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB

Overall score
star star star star star
Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

Differences Specifications Comments

Differences

Nanya Technology NT8GC64B8HB0NS-DI 8GB Reasons to consider
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Report a bug
Samsung M471A5143SB1-CRC 4GB Reasons to consider
Samsung M471A5143SB1-CRC 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    24 left arrow 47
    Around -96% lower latency
  • Faster reading speed, GB/s
    14.9 left arrow 11.6
    Average value in the tests
  • Faster write speed, GB/s
    10.6 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Samsung M471A5143SB1-CRC 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    47 left arrow 24
  • Read speed, GB/s
    11.6 left arrow 14.9
  • Write speed, GB/s
    8.4 left arrow 10.6
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2055 left arrow 2196

Nanya Technology NT8GC64B8HB0NS-DI 8GB RAM comparisons

Nanya Technology NT2GC64B88B0NS-CG 2GB
SK Hynix HMA851U6JJR6N-VK 4GB

Samsung M471A5143SB1-CRC 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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