RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Samsung M471A5143SB1-CRC 4GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB vs Samsung M471A5143SB1-CRC 4GB

总分
star star star star star
Nanya Technology NT8GC64B8HB0NS-DI 8GB

Nanya Technology NT8GC64B8HB0NS-DI 8GB

总分
star star star star star
Samsung M471A5143SB1-CRC 4GB

Samsung M471A5143SB1-CRC 4GB

差异 规格 评论

差异

Nanya Technology NT8GC64B8HB0NS-DI 8GB 需要考虑的原因
Nanya Technology NT8GC64B8HB0NS-DI 8GB
报告一个错误
Samsung M471A5143SB1-CRC 4GB 需要考虑的原因
Samsung M471A5143SB1-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 47
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Samsung M471A5143SB1-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    47 left arrow 24
  • 读取速度，GB/s
    11.6 left arrow 14.9
  • 写入速度，GB/s
    8.4 left arrow 10.6
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2055 left arrow 2196

Nanya Technology NT8GC64B8HB0NS-DI 8GB RAM的比较

Nanya Technology NT2GC64B88B0NS-CG 2GB
SK Hynix HMA851U6JJR6N-VK 4GB

Samsung M471A5143SB1-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
Ramaxel Technology RMSA3320ME88HBF-3200 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA82GR7AFR8N-UH 16GB
SK Hynix HMA82GR7AFR8N-UH 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Mushkin MR[A/B]4U346GJJM8G 8GB
Mushkin MR[A/B]4U346GJJM8G 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
SK Hynix HMA851U6JJR6N-VK 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMR32GX4M2C3000C16 16GB
Corsair CMR32GX4M2C3000C16 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston MSI26D4S9S8ME-8 8GB
Kingston MSI26D4S9S8ME-8 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
Essencore Limited IM48GU88A30-FGGHMB 8GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F4-3600C16-16GTZR 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-16GTRG 16GB
G Skill Intl F4-3200C16-16GTRG 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
G Skill Intl F4-2400C16-8GRS 8GB
G Skill Intl F4-2400C16-8GRS 8GB
内存RAM
Apacer Technology 78.A1GA0.9L4 2GB
Apacer Technology 78.A1GA0.9L4 2GB
Kingston 9905713-030.A00G 8GB
Kingston 9905713-030.A00G 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-2800C16-8GRR 8GB
G Skill Intl F4-2800C16-8GRR 8GB
内存RAM