Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A2K43EB1-CWE 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M471A2K43EB1-CWE 16GB

Overall score
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Overall score
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Differences

  • Below the latency in the PassMark tests, ns
    35 left arrow 55
    Around 36% lower latency
  • Faster reading speed, GB/s
    15.8 left arrow 13.7
    Average value in the tests
  • Faster write speed, GB/s
    13.8 left arrow 9.6
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M471A2K43EB1-CWE 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    35 left arrow 55
  • Read speed, GB/s
    13.7 left arrow 15.8
  • Write speed, GB/s
    9.6 left arrow 13.8
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2312 left arrow 2701
RAM Latency Calculator
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