RAM comparison PNY Electronics PNY 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

PNY Electronics PNY 2GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Overall score

PNY Electronics PNY 2GB

Overall score

Differences Specifications Comments

Reasons to consider
PNY Electronics PNY 2GB

Reasons to consider
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Below the latency in the PassMark tests, ns

26 27

Around -4% lower latency
Faster reading speed, GB/s

18.2 13.8

Average value in the tests
Faster write speed, GB/s

17.3 8.4

Average value in the tests
Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Complete list of technical specifications

PNY Electronics PNY 2GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2274 3938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns