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PNY Electronics PNY 2GB
G Skill Intl F4-2666C15-8GVB 8GB

PNY Electronics PNY 2GB vs G Skill Intl F4-2666C15-8GVB 8GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
G Skill Intl F4-2666C15-8GVB 8GB

G Skill Intl F4-2666C15-8GVB 8GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 30
    Around 10% lower latency
G Skill Intl F4-2666C15-8GVB 8GB Reasons to consider
G Skill Intl F4-2666C15-8GVB 8GB
Report a bug
  • Faster reading speed, GB/s
    17.7 left arrow 13.8
    Average value in the tests
  • Faster write speed, GB/s
    11.8 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
G Skill Intl F4-2666C15-8GVB 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 30
  • Read speed, GB/s
    13.8 left arrow 17.7
  • Write speed, GB/s
    8.4 left arrow 11.8
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 3119

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-2666C15-8GVB 8GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1K43DB2-CTD 8GB
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