RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Compare
PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-16GSXFB 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
G Skill Intl F4-3200C16-16GSXFB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
G Skill Intl F4-3200C16-16GSXFB 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
27
Around -23% lower latency
Faster reading speed, GB/s
18.5
13.8
Average value in the tests
Faster write speed, GB/s
14.2
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
22
Read speed, GB/s
13.8
18.5
Write speed, GB/s
8.4
14.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
3392
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Apacer Technology 78.B1GQB.4010B 4GB
Kingston 9905471-006.A01LF 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Kingston KVR533D2N4 512MB
Crucial Technology BL16G32C16S4B.8FB 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMW64GX4M8C3466C16 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. IRX2666D464L16S/8G 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Ramaxel Technology RMSA3260ME78HAF-2666 8GB
Crucial Technology CT25664AA800.M16FM 2GB
Samsung M378A1K43CB2-CRC 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Samsung M378B5173QH0-YK0 4GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT31GR7CFR4C
Kingston 9905403-444.A00LF 4GB
Kingston K821PJ-MIB 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Golden Empire CL16-18-18 D4-2666 8GB
Samsung M391B5673FH0-CH9 2GB
Nanya Technology NT8GC72B4NB1NJ-CG 8GB
Report a bug
×
Bug description
Source link