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PNY Electronics PNY 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Compare
PNY Electronics PNY 2GB vs Gloway International (HK) STKD4GAM2400-F 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Gloway International (HK) STKD4GAM2400-F 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
83
Around 67% lower latency
Faster write speed, GB/s
8.4
7.8
Average value in the tests
Reasons to consider
Gloway International (HK) STKD4GAM2400-F 8GB
Report a bug
Faster reading speed, GB/s
14.3
13.8
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
83
Read speed, GB/s
13.8
14.3
Write speed, GB/s
8.4
7.8
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
1752
PNY Electronics PNY 2GB RAM comparisons
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RAM Latency Calculator
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RAM 2
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