PNY Electronics PNY 2GB vs Maxsun MSD416G26Q3 16GB

Overall score

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB

Reasons to consider
PNY Electronics PNY 2GB

Below the latency in the PassMark tests, ns

27 84

Around 68% lower latency
Faster reading speed, GB/s

13.8 12.5

Average value in the tests
Faster write speed, GB/s

8.4 7.0

Average value in the tests

Maxsun MSD416G26Q3 16GB

Reasons to consider
Maxsun MSD416G26Q3 16GB

Higher memory bandwidth, mbps

21300 10600

Around 2.01 higher bandwidth

Specifications

Complete list of technical specifications

PNY Electronics PNY 2GB

Maxsun MSD416G26Q3 16GB

Main characteristics

Memory type

DDR3 DDR4
Latency in PassMark, ns

27 84
Read speed, GB/s

13.8 12.5
Write speed, GB/s

8.4 7.0
Memory bandwidth, mbps

10600 21300

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)

2274 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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