PNY Electronics PNY 2GB vs Maxsun MSD416G26Q3 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 84

左右 68% 更低的延时
更快的读取速度，GB/s

13.8 12.5

测试中的平均数值
更快的写入速度，GB/s

8.4 7.0

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 84
读取速度，GB/s

13.8 12.5
写入速度，GB/s

8.4 7.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology J642GU42J9266N2 16GB

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PNY Electronics PNY 2GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Samsung M378A1K43CB2-CTD 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

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G Skill Intl F4-4800C19-8GTESC 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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G Skill Intl F4-3600C18-8GTZR 8GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M378A4G43AB2-CVF 32GB

Samsung M378A4G43AB2-CVF 32GB