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PNY Electronics PNY 2GB
Micron Technology AFLD44EK2P 4GB

PNY Electronics PNY 2GB vs Micron Technology AFLD44EK2P 4GB

Overall score
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Overall score
star star star star star
Micron Technology AFLD44EK2P 4GB

Micron Technology AFLD44EK2P 4GB

Differences Specifications Comments

Differences

PNY Electronics PNY 2GB Reasons to consider
PNY Electronics PNY 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 71
    Around 62% lower latency
  • Faster write speed, GB/s
    8.4 left arrow 6.8
    Average value in the tests
Micron Technology AFLD44EK2P 4GB Reasons to consider
Micron Technology AFLD44EK2P 4GB
Report a bug
  • Faster reading speed, GB/s
    15.3 left arrow 13.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 10600
    Around 1.81 higher bandwidth

Specifications

Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology AFLD44EK2P 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    27 left arrow 71
  • Read speed, GB/s
    13.8 left arrow 15.3
  • Write speed, GB/s
    8.4 left arrow 6.8
  • Memory bandwidth, mbps
    10600 left arrow 19200
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2274 left arrow 1767

PNY Electronics PNY 2GB RAM comparisons

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Micron Technology AFLD44EK2P 4GB RAM comparisons

Crucial Technology CT16G4DFD8266.M16FJ 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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