RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Micron Technology AFLD48VH1P 8GB
Compare
PNY Electronics PNY 2GB vs Micron Technology AFLD48VH1P 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Micron Technology AFLD48VH1P 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Reasons to consider
Micron Technology AFLD48VH1P 8GB
Report a bug
Below the latency in the PassMark tests, ns
24
27
Around -13% lower latency
Faster reading speed, GB/s
15.7
13.8
Average value in the tests
Faster write speed, GB/s
11.4
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Micron Technology AFLD48VH1P 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
24
Read speed, GB/s
13.8
15.7
Write speed, GB/s
8.4
11.4
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2773
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Micron Technology AFLD48VH1P 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B1K70QB0-CK0 8GB
G Skill Intl F4-3000C16-8GRS 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9905663-012.A00G 16GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 8ATF51264AZ-2G1A2 4GB
Kingston KP223C-ELD 2GB
Kingston XW21KG-HYD-NX 8GB
Samsung M378B5173BH0-CH9 4GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3000C15-16GTZ 16GB
Kingston KHX318C10FR/8G 8GB
Corsair CMD32GX4M4B3600C16 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMK32GX4M4B3466C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3333C16-8GTZKW 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Kingston KVR533D2N4 512MB
Kingston 99U5663-003.A00G 16GB
Kingston 99U5471-052.A00LF 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
Report a bug
×
Bug description
Source link