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PNY Electronics PNY 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Compare
PNY Electronics PNY 2GB vs Samsung V-GeN D4S16GL32A8TS 16GB
Overall score
PNY Electronics PNY 2GB
Overall score
Samsung V-GeN D4S16GL32A8TS 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
57
Around 53% lower latency
Reasons to consider
Samsung V-GeN D4S16GL32A8TS 16GB
Report a bug
Faster reading speed, GB/s
19.1
13.8
Average value in the tests
Faster write speed, GB/s
10.1
8.4
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
57
Read speed, GB/s
13.8
19.1
Write speed, GB/s
8.4
10.1
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2274
2377
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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