RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Super Talent F3200UA8G 8GB
Compare
PNY Electronics PNY 2GB vs Super Talent F3200UA8G 8GB
Overall score
PNY Electronics PNY 2GB
Overall score
Super Talent F3200UA8G 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
PNY Electronics PNY 2GB
Report a bug
Below the latency in the PassMark tests, ns
27
58
Around 53% lower latency
Reasons to consider
Super Talent F3200UA8G 8GB
Report a bug
Faster reading speed, GB/s
18.9
13.8
Average value in the tests
Faster write speed, GB/s
9.2
8.4
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
PNY Electronics PNY 2GB
Super Talent F3200UA8G 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
58
Read speed, GB/s
13.8
18.9
Write speed, GB/s
8.4
9.2
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2274
2250
PNY Electronics PNY 2GB RAM comparisons
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Super Talent F3200UA8G 8GB RAM comparisons
Kingston 99U5403-036.A00G 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378T5663QZ3-CF7 2GB
OCMEMORY OCM2933CL16-16GBH 16GB
PNY Electronics PNY 2GB
Super Talent F3200UA8G 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX3200C20S4/16GX 16GB
Samsung DDR3 8GB 1600MHz 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Kingston HX318C10FK/4 4GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology DDR4 2400 2OZ 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
AMD R332G1339U1S 2GB
Samsung M3 78T5663FB3-CF7 2GB
AMD R538G1601U2S 8GB
Crucial Technology CT4G4DFS824A.C8FF 4GB
Kingston KHX1600C9D3/8G 8GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
Samsung M378A1G43DB0-CPB 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT4G4DFS824A.M8FE 4GB
Report a bug
×
Bug description
Source link