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PUSKILL DDR3 1600 8G 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Compare
PUSKILL DDR3 1600 8G 8GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Overall score
PUSKILL DDR3 1600 8G 8GB
Overall score
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
PUSKILL DDR3 1600 8G 8GB
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Faster reading speed, GB/s
16.7
16
Average value in the tests
Reasons to consider
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
37
38
Around -3% lower latency
Faster write speed, GB/s
12.6
10.0
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
PUSKILL DDR3 1600 8G 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
38
37
Read speed, GB/s
16.7
16.0
Write speed, GB/s
10.0
12.6
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2753
2808
PUSKILL DDR3 1600 8G 8GB RAM comparisons
A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
PUSKILL DDR3 1600 8G 8GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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A-DATA Technology DQVE1908 512MB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
SK Hynix HMA41GU6MFR8N-TF 8GB
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