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PUSKILL DDR3 1600 8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB

PUSKILL DDR3 1600 8G 8GB vs Samsung V-GeN D4S4GL30A16TS5 4GB

Overall score
star star star star star
PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Overall score
star star star star star
Samsung V-GeN D4S4GL30A16TS5 4GB

Samsung V-GeN D4S4GL30A16TS5 4GB

Differences Specifications Comments

Differences

PUSKILL DDR3 1600 8G 8GB Reasons to consider
PUSKILL DDR3 1600 8G 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 62
    Around 39% lower latency
  • Faster write speed, GB/s
    10.0 left arrow 7.0
    Average value in the tests
Samsung V-GeN D4S4GL30A16TS5 4GB Reasons to consider
Samsung V-GeN D4S4GL30A16TS5 4GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
PUSKILL DDR3 1600 8G 8GB
Samsung V-GeN D4S4GL30A16TS5 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 62
  • Read speed, GB/s
    16.7 left arrow 16.7
  • Write speed, GB/s
    10.0 left arrow 7.0
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2753 left arrow 1808

PUSKILL DDR3 1600 8G 8GB RAM comparisons

A-DATA Technology DDR3 1866 8GB
Crucial Technology CT16G4DFD8266.M16FE 16GB

Samsung V-GeN D4S4GL30A16TS5 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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