RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Compare
Ramaxel Technology RMSA3260NA78HAF-2666 8GB vs Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Overall score
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Report a bug
Higher memory bandwidth, mbps
21300
19200
Around 1.11% higher bandwidth
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
42
Around -75% lower latency
Faster reading speed, GB/s
15.6
13.3
Average value in the tests
Faster write speed, GB/s
12.1
7.8
Average value in the tests
Specifications
Complete list of technical specifications
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
42
24
Read speed, GB/s
13.3
15.6
Write speed, GB/s
7.8
12.1
Memory bandwidth, mbps
21300
19200
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2181
2852
Ramaxel Technology RMSA3260NA78HAF-2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology BL8G30C15U4R.8FE 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
G Skill Intl F4-4000C16-16GTZR 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905701-141.A00G 16GB
Crucial Technology CT51264BA1339.D16F 4GB
G Skill Intl F4-2400C15-8GNS 8GB
Team Group Inc. ZEUS-2133 8GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK8GX4M2A2400C14 4GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Kingston KHX2133C13S4/16G 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3200C16-8GTZRN 8GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Samsung M393A4K40BB2-CTD 32GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston XF875V-MIH 8GB
AMD R5S38G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CM4X8GE3000C15K4 8GB
Report a bug
×
Bug description
Source link