RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M471A1K43EB1-CWE 8GB
Compare
Ramaxel Technology RMT3010EC58E8F1333 2GB vs Samsung M471A1K43EB1-CWE 8GB
Overall score
Ramaxel Technology RMT3010EC58E8F1333 2GB
Overall score
Samsung M471A1K43EB1-CWE 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Ramaxel Technology RMT3010EC58E8F1333 2GB
Report a bug
Below the latency in the PassMark tests, ns
26
46
Around 43% lower latency
Reasons to consider
Samsung M471A1K43EB1-CWE 8GB
Report a bug
Faster reading speed, GB/s
16
13.5
Average value in the tests
Faster write speed, GB/s
12.4
7.8
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M471A1K43EB1-CWE 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
46
Read speed, GB/s
13.5
16.0
Write speed, GB/s
7.8
12.4
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
1932
2660
Ramaxel Technology RMT3010EC58E8F1333 2GB RAM comparisons
Nanya Technology M2S2G64CB88G5N-DI 2GB
Micron Technology 16ATF1G64AZ-2G1A1 8GB
Samsung M471A1K43EB1-CWE 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-8GSXWB 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Samsung M471A1K43EB1-CWE 8GB
Kingston KHX2800C14D4/8GX 8GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 16ATF2G64HZ-2G3A1 16GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingmax Semiconductor GSLF62F-D8---------- 4GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-2133C15-8GRS 8GB
Corsair CMY16GX3M4A2133C8 4GB
G Skill Intl F4-3800C14-8GTZN 8GB
G Skill Intl F3-1333C9-4GIS 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Corsair CMD8GX3M2A2933C12 4GB
Heoriady M378A1K43BB2-CTD 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology BLS16G4D240FSB.16FD 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M471A1G43DB0-CPB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
SK Hynix HMA82GR7JJR8N-VK 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C16-8GRS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4266C17-16GTZRB 16GB
Report a bug
×
Bug description
Source link