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Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
28
Around 11% lower latency
Reasons to consider
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Report a bug
Faster reading speed, GB/s
18.5
16.1
Average value in the tests
Faster write speed, GB/s
15.7
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
28
Read speed, GB/s
16.1
18.5
Write speed, GB/s
10.1
15.7
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 14 15 16
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
3601
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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