RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Compare
Samsung 1600 CL10 Series 8GB vs Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
32
Around 22% lower latency
Reasons to consider
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Report a bug
Faster reading speed, GB/s
16.8
16.1
Average value in the tests
Faster write speed, GB/s
15.4
10.1
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
32
Read speed, GB/s
16.1
16.8
Write speed, GB/s
10.1
15.4
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2764
3579
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung 1600 CL10 Series 8GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
Samsung M471B5273EB0-CK0 4GB
G Skill Intl F4-2400C15-4GVR 4GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology BLS8G4D26BFSB.16FD2 8GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Gloway International (HK) STKD4GAM2133-F 8GB
Samsung M471B5273EB0-CK0 4GB
SK Hynix HMA81GR7AFR8N-VK 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3200C14-16GTZKW 16GB
SK Hynix HMT451S6BFR8A-PB 4GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
Kingston KHX2800C14D4/8GX 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Apacer Technology D12.2755BS.001 16GB
PNY Electronics PNY 2GB
Corsair CM4X8GF2400C16S4 8GB
Kingston K1N7HK-ELC 2GB
Crucial Technology BLS4G4D240FSC.M8FADG 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung T471A1K43CB1-CRC 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB
Report a bug
×
Bug description
Source link