Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4B3466C16 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMD32GX4M4B3466C16 8GB

Overall score
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Overall score
star star star star star
Corsair CMD32GX4M4B3466C16 8GB

Corsair CMD32GX4M4B3466C16 8GB

Differences

  • Faster reading speed, GB/s
    16.1 left arrow 15.7
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    22 left arrow 25
    Around -14% lower latency
  • Faster write speed, GB/s
    17.2 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4B3466C16 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 22
  • Read speed, GB/s
    16.1 left arrow 15.7
  • Write speed, GB/s
    10.1 left arrow 17.2
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2764 left arrow 3671
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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