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Samsung 1600 CL10 Series 8GB
Corsair CMT16GX4M2C3200C14 8GB
Compare
Samsung 1600 CL10 Series 8GB vs Corsair CMT16GX4M2C3200C14 8GB
Overall score
Samsung 1600 CL10 Series 8GB
Overall score
Corsair CMT16GX4M2C3200C14 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung 1600 CL10 Series 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
35
Around 29% lower latency
Reasons to consider
Corsair CMT16GX4M2C3200C14 8GB
Report a bug
Faster reading speed, GB/s
17
16.1
Average value in the tests
Faster write speed, GB/s
11.5
10.1
Average value in the tests
Higher memory bandwidth, mbps
17000
12800
Around 1.33 higher bandwidth
Specifications
Complete list of technical specifications
Samsung 1600 CL10 Series 8GB
Corsair CMT16GX4M2C3200C14 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
35
Read speed, GB/s
16.1
17.0
Write speed, GB/s
10.1
11.5
Memory bandwidth, mbps
12800
17000
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2764
2699
Samsung 1600 CL10 Series 8GB RAM comparisons
G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMT16GX4M2C3200C14 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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